Home Product Index Discrete Semiconductor Transistors - Bipolar (BJT) - Arrays HN1A01FE-Y,LF

Toshiba Semiconductor and Storage HN1A01FE-Y,LF

Part Number
HN1A01FE-Y,LF
Manufacturer
Toshiba Semiconductor and Storage
Description
TRANS 2PNP 50V 0.15A ES6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
HN1A01FE-Y,LF.pdf
Family
Transistors - Bipolar (BJT) - Arrays
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage

toshiba semiconductor & storage offers a broad range of enabling technology solutions that allow oems, odms, cms and fabless chip companies to develop advanced integrated products for the computing, networking, communications, digital consumer, automotive and other markets.

In Stock 20000 pcs
  • Reference Price

    (In US Dollars)
  • 1 pcs

    0.01811/pcs
  • 4,000 pcs

    0.01811/pcs
  • 8,000 pcs

    0.01575/pcs
  • 12,000 pcs

    0.01339/pcs
  • 28,000 pcs

    0.01260/pcs
  • 100,000 pcs

    0.01050/pcs
Total:0.01811/pcs Unit Price:
0.01811/pcs
Target price:
Quantity:
Product Parameter
Part Number HN1A01FE-Y,LF
Part Status Active
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 150mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 6V
Power - Max 100mW
Frequency - Transition 80MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
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