Home Product Index Discrete Semiconductor Transistors - Bipolar (BJT) - Arrays SG2013J-883B

Microsemi Corporation SG2013J-883B

Part Number
SG2013J-883B
Manufacturer
Microsemi Corporation
Description
TRANS 7NPN DARL 50V 0.6A 16JDIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
SG2013J-883B.pdf
Family
Transistors - Bipolar (BJT) - Arrays
Microsemi Corporation

Microsemi Corporation

provider of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets.

In Stock 20 pcs
  • Reference Price

    (In US Dollars)
  • 1 pcs

    37.95000/pcs
Total:37.95000/pcs Unit Price:
37.95000/pcs
Target price:
Quantity:
Product Parameter
Part Number SG2013J-883B
Part Status Active
Transistor Type 7 NPN Darlington
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 1.9V @ 600µA, 500mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 900 @ 500mA, 2V
Power - Max -
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case -
Supplier Device Package 16-CDIP
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