provider of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets.
| Part Number | JANTXV2N6301 |
|---|---|
| Part Status | Discontinued at Digi-Key |
| Transistor Type | PNP - Darlington |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Power - Max | 75W |
| Frequency - Transition | - |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-213AA, TO-66-2 |
| Supplier Device Package | TO-66 |
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 100V 35A DO5
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 100V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 35A DO5
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 35A DO203AB
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO5
In Stock: 87
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO5
In Stock: 100
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 39
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
In Stock: 36
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
In Stock: 4
