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| Part Number | JAN2N6898 |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 15.8A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3 |
| Package / Case | TO-204AA, TO-3 |
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 35A DO203AB
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Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 35A DO203AB
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Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 600V 35A DO203AB
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Description: DIODE GEN PURP 200V 12A DO203AA
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Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 200V 12A DO203AA
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 400V 12A DO203AA
In Stock: 0
