provider of semiconductor and system solutions for aerospace & defense, communications, data center and industrial markets.
| Part Number | APT60S20B2CTG |
|---|---|
| Part Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) (per Diode) | 75A |
| Voltage - Forward (Vf) (Max) @ If | 900mV @ 60A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 55ns |
| Current - Reverse Leakage @ Vr | 1mA @ 200V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| Supplier Device Package | T-MAX™ [B2] |
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 600V 54A T-MAX
In Stock: 4
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 600V 39A SOT-227
In Stock: 2
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 600V 43A TO-264
In Stock: 3
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 600V 35A TO-264
In Stock: 15
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 600V 35A TO-264
In Stock: 25
Manufacturer: Microsemi Corporation
Description: MOSFET N-CH 600V 18A TO247AD
In Stock: 0
Manufacturer: Microsemi Corporation
Description: DIODE GEN PURP 1KV 60A TO247
In Stock: 375
Manufacturer: Microsemi Corporation
Description: DIODE ARRAY GP 1000V 60A TO264
In Stock: 0
