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| Part Number | 2N6849U |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34.8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 4.1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 18-ULCC (9.14x7.49) |
| Package / Case | 18-BQFN Exposed Pad |
Manufacturer: ON Semiconductor
Description: THYRISTOR PROG UNIJUNCT 40V TO92
In Stock: 0
Manufacturer: ON Semiconductor
Description: THYRISTOR PROG UNIJUNCT 40V TO92
In Stock: 0
Manufacturer: ON Semiconductor
Description: THYRISTOR PROG UNIJUNCT 40V TO92
In Stock: 0
Manufacturer: ON Semiconductor
Description: THYRISTOR PROG UNIJUNCT 40V TO92
In Stock: 0
Manufacturer: ON Semiconductor
Description: THYRISTOR PROG UNIJUNCT 40V TO92
In Stock: 0
