Home Product Index Discrete Semiconductor Transistors - FETs, MOSFETs - Single GP1M003A090PH

Global Power Technologies Group GP1M003A090PH

Part Number
GP1M003A090PH
Manufacturer
Global Power Technologies Group
Description
MOSFET N-CH 900V 2.5A IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Family
Transistors - FETs, MOSFETs - Single
Global Power Technologies Group

Global Power Technologies Group

global power technologies group, inc. is an integrated development and manufacturing company dedicated to products based on silicon carbide (sic) technologies.

In Stock 3732 pcs
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Product Parameter
Part Number GP1M003A090PH
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 748pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Rds On (Max) @ Id, Vgs 5.1 Ohm @ 1.25A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-Pak
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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