epc designs, develops, markets, and sells gallium nitride based power management devices using mature silicon foundries.
| Part Number | EPC2020 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 16mA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780pF @ 30V |
| Vgs (Max) | +6V, -4V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 31A, 5V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
| Package / Case | Die |
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